A proven reactor chamber that has performed the most complex processes of epitaxial and poly silicon growth. Silicon on sapphire, selective epitaxial growth, sharp transition width growth on heavily doped substrates, Insitu Multi-Dopant concentration and controlled dopant gradient layers. The Rexon2® reactor chamber has been used in the manufacture of all types of semiconductor devices. Whether your requirements are VLSI, Bipolar, CMOS, Discrete, Digital, Linear Analog, or Poly for dielectric isolated devices, we have done it. The vertical gas entry, rotating silicon carbide coated susceptor, coupled with a patented bell jar configuration and adjustable R.F. coil design, gives the processed wafer load excellent uniformity of both thickness and resistivity. The process chamber and plumbing design have been manufactured to the highest standards to eliminate metallic contaminations. The Rexon® reactor has been used to grow single crystal silicon from sub micron to as thick as 250 microns. Rexon® is not limited to one or two silicon sources, but performs equally well on silane, dichlorsilane, trichlorosilane or silicon tetrachloride. For those factories and foundries using multiple wafer diameters, Rexon® may be changed to accommodate any wafer from 2" to 200 mm within seconds.

Dual-station Reactor

Rexon® Dual-station design allows automatic switch over of the R.F. Generator and process gasses to a waiting process chamber. This design optimizes the process time and the power supply usage with a single tool installation. This design is especially useful when the deposit time is less than the heat up and cool down or separate process program is being run on each chamber. This system can also be used as a high through put machine with a second R.F. power supply.

Single-Station Reactor

Rexon® single station has one process chamber with a dedicated gas control and power supply. This design should be used when the deposit time is much longer than the combination of heat up and cool down or the need for high through put is not a major concern. This single reactor is also used to grow thick layers of poly silicon with thickness of more than 25 mils. Processes have been developed to grow this poly layer at 3-8 micron per minute. The bow is routinely less than 3 mils. with fine grain structure and no voids. The Rexon® reactor has large doors with magnetic seals. These folding doors are latched with pull handles and rotate on bushings and bearings. This combination reduces particle generation and allows easy access for cleaning and maintenance.

Gas Flow Control System

The Rexon® gas jungle is designed to accept all major manufacturers of automatic mass flow controllers. The layout allows easy additions and deletions of components. The process tubing has an electro-polished interior, orbital welded under inert gas using microweld fittings with VCR connections. The exterior is then electro-polished. The process gas system is leaked tested to a rate of less than 1 x 10-8 He STD cc/sec. Rexon® comes standard with an adjustable coil purge and separate process dopant lines injected at the bottom of each reactor. Each Rexon® comes standard, with two silicon and two dopant sources. R.F. Heating Rexon® R.F. coil is designed to accept any manufacturer's 125 kW R.F. Generator operating from 100-250KHz or an RE Dixon MK Series solid state power supply. A closed loop signal of 5 ma, generated via an optical sensor, is used to hold Rexon's susceptor within + 3º C and + 2º C from run to run.